STMicroelectronics Nチャンネル MOSFET 4 A 表面実装 パッケージDPAK (TO-252) 3 ピン

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
Zener-protected
Applications
Switching applications

受注確定後にお客様専用製品として商品化されるため、発注後のキャンセル・返品はお受けできません。