STMicroelectronics Nチャンネル MOSFET650 V 40 A 表面実装 パッケージPowerFLAT 8 x 8 HV 5 ピン

The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode
Low capacitance
Source sensing pin for increased efficiency

受注確定後にお客様専用製品として商品化されるため、発注後のキャンセル・返品はお受けできません。