STMicroelectronics トランジスタ, PNP, 表面実装, -2 A, 2STR2160

The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Miniature SOT-23 plastic package for surface mounting circuits
Applications
LED
Battery charger
Motor and relay driver
Voltage regulation

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