STMicroelectronics トランジスタ, NPN, 表面実装, 16 A, STB13007DT4

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.

Fully characterized at 125 ˚C
Very high switching speed
Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
Integrated free-wheeling diode
High voltage capability
Minimum lot-to-lot spread for reliable operation
Large RBSOA
Low spread of dynamic parameters
Applications
Electronic transformers for halogen lamps
Switch mode power supplies

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