STMicroelectronics Nチャンネル MOSFET650 V 119 A スルーホール パッケージHiP247-4 4 ピン

The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.

High speed switching performance
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency

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